IXFN32N60

MOSFET N-CH 600V 32A SOT-227

Manufacturer IXYS Corporation MPN IXFN32N60 SPQ 10 ECCN -- Schedule B -- RoHS -- Datasheet IXFN32N60.pdf

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Product parameter

-FET Feature	Standard
-Package / Case	SOT-227-4, miniBLOC
-Drain to Source Voltage (Vdss)	600V
-Standard Package	10
-Current - Continuous Drain (Id) @ 25掳C	32A
-FET Type	MOSFET N-Channel, Metal Oxide
-Family	FETs - Modules
-Mounting Type	Chassis Mount
-Rds On (Max) @ Id, Vgs	250 mOhm @ 500mA, 10V
-Power - Max	520W
-Supplier Device Package	SOT-227B
-Gate Charge (Qg) @ Vgs	325nC @ 10V
-Packaging	Tube
-Series	HiPerFET鈩�/a>
-Vgs(th) (Max) @ Id	4.5V @ 8mA
-Input Capacitance (Ciss) @ Vds	9000pF @ 25V