IXFN32N100Q3

Module; single transistor; 1kV; 28A; SOT227B; Ugs: ±40V; screw; 780W

Manufacturer IXYS Corporation MPN IXFN32N100Q3 SPQ 1 ECCN -- Schedule B -- RoHS -- Datasheet IXFN32N100Q3.pdf

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Product parameter

-FET Feature	Standard
-Package / Case	SOT-227-4, miniBLOC
-Drain to Source Voltage (Vdss)	1000V (1kV)
-Current - Continuous Drain (Id) @ 25°C	28A
-Gate Charge (Qg) @ Vgs	195nC @ 10V
-FET Type	MOSFET N-Channel, Metal Oxide
-Series	HiPerFET™
-Vgs(th) (Max) @ Id	6.5V @ 8mA
-Input Capacitance (Ciss) @ Vds	9940pF @ 25V
-Rds On (Max) @ Id, Vgs	320 mOhm @ 16A, 10V
-Power - Max	780W
-Supplier Device Package	SOT-227B
-Standard Package	10
-Packaging	Tube
-Online Catalog	IXFN HiPerFET™ Q3 MOSFET Series
-Family	FETs - Modules
-Mounting Type	Chassis Mount