IXFN30N120P

Module; single transistor; 1.2kV; 30A; SOT227B; Ugs: ±40V; screw

Manufacturer IXYS Corporation MPN IXFN30N120P SPQ 1 ECCN -- Schedule B -- RoHS -- Datasheet IXFN30N120P.pdf

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Product parameter

-FET Feature	Standard
-Package / Case	SOT-227-4, miniBLOC
-Drain to Source Voltage (Vdss)	1200V (1.2kV)
-Current - Continuous Drain (Id) @ 25°C	30A
-Gate Charge (Qg) @ Vgs	310nC @ 10V
-FET Type	MOSFET N-Channel, Metal Oxide
-Family	FETs - Modules
-Mounting Type	Chassis Mount
-Rds On (Max) @ Id, Vgs	350 mOhm @ 500mA, 10V
-Power - Max	890W
-Supplier Device Package	SOT-227B
-Standard Package	10
-Packaging	Tube
-Series	Polar™
-Vgs(th) (Max) @ Id	6.5V @ 1mA
-Input Capacitance (Ciss) @ Vds	19000pF @ 25V