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IXFN26N120P

Module; single transistor; 1.2kV; 23A; SOT227B; Ugs: ±40V; screw

Manufacturer IXYS Corporation
MPN IXFN26N120P
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-FET Feature Standard
-Package / Case SOT-227-4, miniBLOC
-Drain to Source Voltage (Vdss) 1200V (1.2kV)
-Current - Continuous Drain (Id) @ 25°C 23A
-Gate Charge (Qg) @ Vgs 225nC @ 10V
-FET Type MOSFET N-Channel, Metal Oxide
-Family FETs - Modules
-Mounting Type Chassis Mount
-Rds On (Max) @ Id, Vgs 460 mOhm @ 13A, 10V
-Power - Max 695W
-Supplier Device Package SOT-227B
-Standard Package   10
-Packaging   Tube  
-Series Polar™
-Vgs(th) (Max) @ Id 6.5V @ 1mA
-Input Capacitance (Ciss) @ Vds 14000pF @ 25V

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