IXFH10N100Q

MOSFET N-CH 1000V 10A TO-247AD

Manufacturer IXYS Corporation MPN IXFH10N100Q SPQ 30 ECCN -- Schedule B -- RoHS -- Datasheet IXFH10N100Q.pdf

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Product parameter

-FET Feature	Standard
-Package / Case	TO-247-3
-Drain to Source Voltage (Vdss)	1000V (1kV)
-Current - Continuous Drain (Id) @ 25°C	10A (Tc)
-Gate Charge (Qg) @ Vgs	155nC @ 10V
-FET Type	MOSFET N-Channel, Metal Oxide
-Family	FETs - Single
-Mounting Type	Through Hole
-Rds On (Max) @ Id, Vgs	1.2 Ohm @ 5A, 10V
-Power - Max	300W
-Supplier Device Package	TO-247AD (IXFH)
-Standard Package	30
-Packaging	Tube
-Series	HiPerFET™
-Vgs(th) (Max) @ Id	4.5V @ 4mA
-Input Capacitance (Ciss) @ Vds	4000pF @ 25V