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IXFB52N90P

Transistor: N-MOSFET; Polar™; unipolar; 900V; 52A; 1250W; PLUS264™

Manufacturer IXYS Corporation
MPN IXFB52N90P
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet IXFB52N90P.pdf

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Product parameter

-FET Feature Standard
-Package / Case TO-264-3, TO-264AA
-Drain to Source Voltage (Vdss) 900V
-Current - Continuous Drain (Id) @ 25°C 52A (Tc)
-Gate Charge (Qg) @ Vgs 308nC @ 10V
-FET Type MOSFET N-Channel, Metal Oxide
-Series HiPerFET™, PolarP2™
-Vgs(th) (Max) @ Id 6.5V @ 1mA
-Input Capacitance (Ciss) @ Vds 19000pF @ 25V
-Rds On (Max) @ Id, Vgs 160 mOhm @ 26A, 10V
-Power - Max 1250W
-Supplier Device Package PLUS264™
-Standard Package   25
-Packaging   Tube  
-Online Catalog N-Channel Standard FETs
-Family FETs - Single
-Mounting Type Through Hole

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