IXFB50N80Q2

IXFB50N80Q2 , N沟道 MOSFET 晶体管, 50 A, Vds=800 V, 3针 PLUS264封装

Manufacturer IXYS Corporation MPN IXFB50N80Q2 SPQ 25 ECCN -- Schedule B -- RoHS -- Datasheet --

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Product parameter

-FET Feature	Standard
-Package / Case	TO-264-3, TO-264AA
-Drain to Source Voltage (Vdss)	800V
-Current - Continuous Drain (Id) @ 25°C	50A (Tc)
-Gate Charge (Qg) @ Vgs	260nC @ 10V
-FET Type	MOSFET N-Channel, Metal Oxide
-Series	HiPerFET™
-Vgs(th) (Max) @ Id	5.5V @ 8mA
-Input Capacitance (Ciss) @ Vds	7200pF @ 25V
-Rds On (Max) @ Id, Vgs	160 mOhm @ 500mA, 10V
-Power - Max	890W
-Supplier Device Package	PLUS264™
-Standard Package	25
-Packaging	Tube
-Online Catalog	N-Channel Standard FETs
-Family	FETs - Single
-Mounting Type	Through Hole