IXFB40N110P

MOSFET N-CH 1100V 40A PLUS264

Manufacturer IXYS Corporation MPN IXFB40N110P SPQ 30 ECCN -- Schedule B -- RoHS -- Datasheet IXFB40N110P.pdf

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Product parameter

-FET Feature	Standard
-Package / Case	TO-264-3, TO-264AA
-Drain to Source Voltage (Vdss)	1100V (1.1kV)
-Current - Continuous Drain (Id) @ 25°C	40A (Tc)
-Gate Charge (Qg) @ Vgs	310nC @ 10V
-FET Type	MOSFET N-Channel, Metal Oxide
-Family	FETs - Single
-Mounting Type	Through Hole
-Rds On (Max) @ Id, Vgs	260 mOhm @ 20A, 10V
-Power - Max	1250W
-Supplier Device Package	PLUS264™
-Standard Package	30
-Packaging	Tube
-Series	HiPerFET™, PolarP2™
-Vgs(th) (Max) @ Id	6.5V @ 1mA
-Input Capacitance (Ciss) @ Vds	19000pF @ 25V