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IXFA130N10T2

Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO263

Manufacturer IXYS Corporation
MPN IXFA130N10T2
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet IXFA130N10T2.pdf

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Product parameter

-FET Feature Standard
-Package / Case TO-263-4, D虏Pak (3 Leads + Tab), TO-263AA
-Drain to Source Voltage (Vdss) 100V
-Standard Package   50
-Current - Continuous Drain (Id) @ 25掳C 130A (Tc)
-FET Type MOSFET N-Channel, Metal Oxide
-Family FETs - Single
-Mounting Type Surface Mount
-Rds On (Max) @ Id, Vgs 9.1 mOhm @ 65A, 10V
-Power - Max 360W
-Supplier Device Package TO-263 (IXFA)
-Gate Charge (Qg) @ Vgs 130nC @ 10V
-Packaging   Tube  
-Series GigaMOS鈩� HiPerFET鈩� TrenchT2鈩�/a>
-Vgs(th) (Max) @ Id 4.5V @ 1mA
-Input Capacitance (Ciss) @ Vds 6600pF @ 25V

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