IXBT24N170

Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO268

Manufacturer IXYS Corporation MPN IXBT24N170 SPQ 1 ECCN -- Schedule B -- RoHS -- Datasheet IXBT24N170.pdf

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Product parameter

-Current - Collector Pulsed (Icm)	230A
-Power - Max	250W
-Standard Package	30
-Packaging	Tube
-Gate Charge	140nC
-Series	BIMOSFET™
-Mounting Type	Surface Mount
-Input Type	Standard
-Package / Case	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
-Supplier Device Package	TO-268
-Current - Collector (Ic) (Max)	60A
-Reverse Recovery Time (trr)	1.06µs
-Voltage - Collector Emitter Breakdown (Max)	1700V
-Family	IGBTs - Single
-Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 24A