IXBP5N160G

Transistor: IGBT; BiMOSFET™; 1.6kV; 3.5A; 68W; TO220-3

Manufacturer IXYS Corporation MPN IXBP5N160G SPQ 1 ECCN -- Schedule B -- RoHS -- Datasheet IXBP5N160G.pdf

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Product parameter

-Package / Case	TO-220-3
-Test Condition	960V, 3A, 47 Ohm, 10V
-Standard Package	50
-Packaging	Tube
-Voltage - Collector Emitter Breakdown (Max)	1600V
-Family	IGBTs - Single
-Vce(on) (Max) @ Vge, Ic	7.2V @ 15V, 3A
-Power - Max	68W
-Supplier Device Package	TO-247AD
-Current - Collector (Ic) (Max)	5.7A
-Gate Charge	26nC
-Series	BIMOSFET™
-Mounting Type	Through Hole
-Input Type	Standard