IXBH10N170

Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 140W; TO247-3

制造商 IXYS Corporation 制造商零件编号 IXBH10N170 标准包装 30 ECCN -- Schedule B -- RoHS -- 规格说明书 IXBH10N170.pdf

询价

需求数量		目标价格
联系电话		姓名
公司		邮箱

产品参数

-Current - Collector Pulsed (Icm)	40A
-Power - Max	140W
-Supplier Device Package	TO-247AD (IXBH)
-Td (on/off) @ 25°C	35ns/500ns
-Packaging	Tube
-Gate Charge	30nC
-Series	BIMOSFET™
-Mounting Type	Through Hole
-Switching Energy	6mJ (off)
-Package / Case	TO-247-3
-Test Condition	1360V, 10A, 56 Ohm, 15V
-Standard Package	30
-Current - Collector (Ic) (Max)	20A
-Reverse Recovery Time (trr)	360ns
-Voltage - Collector Emitter Breakdown (Max)	1700V
-Family	IGBTs - Single
-Vce(on) (Max) @ Vge, Ic	3.8V @ 15V, 10A
-Input Type	Standard