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IXBH10N170

Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 140W; TO247-3

Manufacturer IXYS Corporation
MPN IXBH10N170
SPQ 30
ECCN --
Schedule B --
RoHS --
Datasheet IXBH10N170.pdf

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Product parameter

-Current - Collector Pulsed (Icm) 40A
-Power - Max 140W
-Supplier Device Package TO-247AD (IXBH)
-Td (on/off) @ 25°C 35ns/500ns
-Packaging   Tube  
-Gate Charge 30nC
-Series BIMOSFET™
-Mounting Type Through Hole
-Switching Energy 6mJ (off)
-Package / Case TO-247-3
-Test Condition 1360V, 10A, 56 Ohm, 15V
-Standard Package   30
-Current - Collector (Ic) (Max) 20A
-Reverse Recovery Time (trr) 360ns
-Voltage - Collector Emitter Breakdown (Max) 1700V
-Family IGBTs - Single
-Vce(on) (Max) @ Vge, Ic 3.8V @ 15V, 10A
-Input Type Standard

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