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CSD25213W10

MOSFET P-CH 20V 1.6A 4DSBGA

Manufacturer Texas Instruments
MPN CSD25213W10
SPQ 3000
ECCN --
Schedule B --
RoHS RoHS Compliant
Datasheet CSD25213W10.pdf

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Product parameter

-FET Feature Logic Level Gate
-Package / Case 4-UFBGA, DSBGA
-Drain to Source Voltage (Vdss) 20V
-Current - Continuous Drain (Id) @ 25°C 1.6A (Ta)
-FET Type MOSFET P-Channel, Metal Oxide
-Family FETs - Single
-Vgs(th) (Max) @ Id 1.1V @ 250µA
-Packaging Tape & Reel (TR)  
-Rds On (Max) @ Id, Vgs 47 mOhm @ 1A, 4.5V
-Power - Max 1W
-Supplier Device Package 4-DSBGA (1x1)
-Gate Charge (Qg) @ Vgs 2.9nC @ 4.5V
-Series NexFET™
-Mounting Type Surface Mount
-Input Capacitance (Ciss) @ Vds 478pF @ 10V
-RoHS Lead free / RoHS Compliant

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