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IRF640FP

MOSFET N-CH 200V 18A TO-220FP

Manufacturer STMicroelectronics
MPN IRF640FP
SPQ 1000
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-FET Feature Logic Level Gate
-Package / Case TO-220-3 Full Pack
-Drain to Source Voltage (Vdss) 200V
-Current - Continuous Drain (Id) @ 25°C 18A (Tc)
-Gate Charge (Qg) @ Vgs 72nC @ 10V
-FET Type MOSFET N-Channel, Metal Oxide
-Family FETs - Single
-Mounting Type Through Hole
-Rds On (Max) @ Id, Vgs 180 mOhm @ 9A, 10V
-Power - Max 40W
-Supplier Device Package TO-220FP
-Standard Package   1,000
-Packaging   Tube  
-Series MESH OVERLAY™
-Vgs(th) (Max) @ Id 4V @ 250µA
-Input Capacitance (Ciss) @ Vds 1560pF @ 25V

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