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IRF634STRRPBF

N channel ;VBRDSS 250 V; RDSon 450 mOhm ;

Manufacturer Vishay
MPN IRF634STRRPBF
SPQ 1
ECCN ECL99
Schedule B --
RoHS --
Datasheet --

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Product parameter

-FET Feature Standard
-Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-Drain to Source Voltage (Vdss) 250V
-Current - Continuous Drain (Id) @ 25°C 8.1A (Tc)
-Gate Charge (Qg) @ Vgs 41nC @ 10V
-FET Type MOSFET N-Channel, Metal Oxide
-Vgs(th) (Max) @ Id 4V @ 250µA
-Input Capacitance (Ciss) @ Vds 770pF @ 25V
-Rds On (Max) @ Id, Vgs 450 mOhm @ 5.1A, 10V
-Power - Max 3.1W
-Supplier Device Package D2PAK
-Standard Package   800
-Packaging   Tape & Reel (TR)  
-Family FETs - Single
-Mounting Type Surface Mount
-ECCN ECL99

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