IRF634

MOSFET N-CH 250V 8.1A TO-220AB

Manufacturer STMicroelectronics MPN IRF634 SPQ 1000 ECCN -- Schedule B -- RoHS -- Datasheet IRF634.pdf

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Product parameter

-FET Feature	Standard
-Package / Case	TO-220-3
-Drain to Source Voltage (Vdss)	250V
-Current - Continuous Drain (Id) @ 25°C	8A (Tc)
-Gate Charge (Qg) @ Vgs	51.8nC @ 10V
-FET Type	MOSFET N-Channel, Metal Oxide
-Family	FETs - Single
-Mounting Type	Through Hole
-Rds On (Max) @ Id, Vgs	450 mOhm @ 4A, 10V
-Power - Max	80W
-Supplier Device Package	TO-220AB
-Standard Package	1,000
-Packaging	Tube
-Series	MESH OVERLAY™
-Vgs(th) (Max) @ Id	4V @ 250µA
-Input Capacitance (Ciss) @ Vds	770pF @ 25V