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IRF5810TR

MOSFET 2P-CH 20V 2.9A 6-TSOP

Manufacturer Infineon Technologies
MPN IRF5810TR
SPQ 3000
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-FET Feature Logic Level Gate
-Package / Case SOT-23-6 Thin, TSOT-23-6
-Drain to Source Voltage (Vdss) 20V
-Standard Package   3,000
-Current - Continuous Drain (Id) @ 25掳C 2.9A
-FET Type 2 P-Channel (Dual)
-Series HEXFET庐
-Vgs(th) (Max) @ Id 1.2V @ 250碌A
-Input Capacitance (Ciss) @ Vds 650pF @ 16V
-Rds On (Max) @ Id, Vgs 90 mOhm @ 2.9A, 4.5V
-Power - Max 960mW
-Supplier Device Package 6-TSOP
-Gate Charge (Qg) @ Vgs 9.6nC @ 4.5V
-Packaging   Tape & Reel (TR)  
-Design Resources IRF5810TR Saber Model IRF5810TR Spice Model
-Family FETs - Arrays
-Mounting Type Surface Mount

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