IPG20N06S3L-35

MOSFET 2N-CH 55V 20A TDSON-8

Manufacturer Infineon Technologies MPN IPG20N06S3L-35 SPQ 5000 ECCN -- Schedule B -- RoHS -- Datasheet --

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Product parameter

-FET Feature	Logic Level Gate
-Package / Case	8-PowerTDFN
-PCN Obsolescence/ EOL	IPG20N06S3L, IPG15N06S3L 26/Nov/2010
-Supplier Device Package	PG-TDSON-8-4 (5.15x6.15)
-Standard Package	5,000
-Packaging	Tape & Reel (TR)
-Series	OptiMOS™
-Vgs(th) (Max) @ Id	2.2V @ 15µA
-Input Capacitance (Ciss) @ Vds	1730pF @ 25V
-Rds On (Max) @ Id, Vgs	35 mOhm @ 11A, 10V
-Power - Max	30W
-Drain to Source Voltage (Vdss)	55V
-Current - Continuous Drain (Id) @ 25°C	20A
-Gate Charge (Qg) @ Vgs	23nC @ 10V
-FET Type	2 N-Channel (Dual)
-Family	FETs - Arrays
-Mounting Type	Surface Mount