IPG20N06S3L-23

MOSFET 2N-CH 55V 20A TDSON-8

制造商 Infineon Technologies 制造商零件编号 IPG20N06S3L-23 标准包装 5000 ECCN -- Schedule B -- RoHS -- 规格说明书 --

询价

需求数量		目标价格
联系电话		姓名
公司		邮箱

产品参数

-FET Feature	Logic Level Gate
-Package / Case	8-PowerTDFN
-PCN Obsolescence/ EOL	IPG20N06S3L, IPG15N06S3L 26/Nov/2010
-Supplier Device Package	PG-TDSON-8-4 (5.15x6.15)
-Standard Package	5,000
-Packaging	Tape & Reel (TR)
-Series	OptiMOS™
-Vgs(th) (Max) @ Id	2.2V @ 20µA
-Input Capacitance (Ciss) @ Vds	2950pF @ 25V
-Rds On (Max) @ Id, Vgs	23 mOhm @ 16A, 10V
-Power - Max	45W
-Drain to Source Voltage (Vdss)	55V
-Current - Continuous Drain (Id) @ 25°C	20A
-Gate Charge (Qg) @ Vgs	42nC @ 10V
-FET Type	2 N-Channel (Dual)
-Family	FETs - Arrays
-Mounting Type	Surface Mount