English 简体中文 日本語

IMB7AT108

TRANS 2PNP PREBIAS 0.3W SOT457

Manufacturer ROHM Semiconductor
MPN IMB7AT108
SPQ 3000
ECCN --
Schedule B --
RoHS --
Datasheet --

Quote

Demand quantity Target price
Contact number name
company email

Product parameter

-Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
-Package / Case SOT-457
-Transistor Type 2 PNP - Pre-Biased (Dual)
-Current - Collector (Ic) (Max) 100mA
-Category Discrete Semiconductor Products
-Voltage - Collector Emitter Breakdown (Max) 50V
-Mounting Type Surface Mount
-Packaging Tape & Reel (TR)
-Resistor - Base (R1) 4.7 kOhms
-Resistor - Base (R1) (Ohms) 4.7k
-Power - Max 300mW
-Supplier Device Package SOT-457
-Part Status Not For New Designs
-Manufacturer Rohm Semiconductor
-Family Transistors - Bipolar (BJT) - Arrays, Pre-Biased
-DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA, 5V
-Categories Discrete Semiconductor Products -> Transistors - Bipolar (BJT) - Arrays, Pre-Biased
-Moisture Sensitivity Level (MSL) 1 (Unlimited)

Copyright © 1997-2013 NetEase. All Rights Reserved.