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IFND89

Manufacturer InterFET
MPN IFND89
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-Packaging: Bulk
-Rds On - Drain-Source Resistance: 3 kOhms
-Manufacturer: InterFET
-Transistor Polarity: N-Channel
-Technology: Si
-RoHS:  Details
-Vgs - Gate-Source Breakdown Voltage: - 15 V
-Id - Continuous Drain Current: 1 uA
-Configuration: Single
-Gate-Source Cutoff Voltage: - 900 mV
-Forward Transconductance - Min: 600 uS
-Drain-Source Current at Vgs=0: 1 mA
-Pd - Power Dissipation: 250 mW
-Factory Pack Quantity: 1
-Brand: InterFET
-Package / Case: SC-70-5
-Product Category: JFET
-Vds - Drain-Source Breakdown Voltage: 3.3 V
-Unit Weight: 0.000705 oz
-Mounting Style: SMD/SMT

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