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IDD10SG60C

DIODE SCHOTTKY 600V 10A TO252-3

Manufacturer Infineon Technologies
MPN IDD10SG60C
SPQ 2500
ECCN --
Schedule B --
RoHS --
Datasheet IDD10SG60C.pdf

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Product parameter

-Operating Temperature - Junction -55°C ~ 175°C
-Capacitance @ Vr, F 290pF @ 1V, 1MHz
-Supplier Device Package PG-TO252-3
-Packaging   Tape & Reel (TR)  
-Speed No Recovery Time > 500mA (Io)
-Current - Reverse Leakage @ Vr 90µA @ 600V
-Family Diodes, Rectifiers - Single
-Voltage - DC Reverse (Vr) (Max) 600V
-Current - Average Rectified (Io) 10A (DC)
-Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
-Standard Package   2,500
-Diode Type Silicon Carbide Schottky
-Reverse Recovery Time (trr) 0ns
-Series thinQ!™
-Mounting Type Surface Mount
-Voltage - Forward (Vf) (Max) @ If 2.1V @ 10A

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