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IDB18E120

DIODE GEN PURP 1.2KV 31A TO263-3

Manufacturer Infineon Technologies
MPN IDB18E120
SPQ 1000
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-Operating Temperature - Junction -55°C ~ 150°C
-Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-Supplier Device Package PG-TO263-3
-Packaging   Tape & Reel (TR)  
-Speed Fast Recovery =< 500ns, > 200mA (Io)
-Current - Reverse Leakage @ Vr 100µA @ 1200V
-Mounting Type Surface Mount
-Voltage - Forward (Vf) (Max) @ If 2.15V @ 18A
-Current - Average Rectified (Io) 31A (DC)
-PCN Obsolescence/ EOL Multiple Devices 18/Aug/2014
-Standard Package   1,000
-Diode Type Standard
-Reverse Recovery Time (trr) 195ns
-Family Diodes, Rectifiers - Single
-Voltage - DC Reverse (Vr) (Max) 1200V (1.2kV)

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