English 简体中文 日本語

IDB10S60C

DIODE SILICON 600V 10A D2PAK

Manufacturer Infineon Technologies
MPN IDB10S60C
SPQ 1000
ECCN --
Schedule B --
RoHS --
Datasheet --

Quote

Demand quantity Target price
Contact number name
company email

Product parameter

-Operating Temperature - Junction -55°C ~ 175°C
-Capacitance @ Vr, F 480pF @ 1V, 1MHz
-Supplier Device Package D2PAK
-Packaging   Tape & Reel (TR)  
-Speed No Recovery Time > 500mA (Io)
-Current - Reverse Leakage @ Vr 140µA @ 600V
-Family Diodes, Rectifiers - Single
-Voltage - DC Reverse (Vr) (Max) 600V
-Current - Average Rectified (Io) 10A (DC)
-Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-Standard Package   1,000
-Diode Type Silicon Carbide Schottky
-Reverse Recovery Time (trr) 0ns
-Series thinQ!™
-Mounting Type Surface Mount
-Voltage - Forward (Vf) (Max) @ If 1.7V @ 10A

Copyright © 1997-2013 NetEase. All Rights Reserved.