HTNFET-D

MOSFET N-CH 55V 8-DIP

Manufacturer Honeywell Microelectronics & Precision Sensors MPN HTNFET-D SPQ 1 ECCN -- Schedule B -- RoHS -- Datasheet --

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Product parameter

-FET Feature	Standard
-Package / Case	8-CDIP Exposed Pad
-Drain to Source Voltage (Vdss)	55V
-Standard Package	1
-Packaging	Bulk
-Series	HTMOS™
-Vgs(th) (Max) @ Id	2.4V @ 100µA
-Input Capacitance (Ciss) @ Vds	290pF @ 28V
-Rds On (Max) @ Id, Vgs	400 mOhm @ 100mA, 5V
-Power - Max	50W
-Supplier Device Package	8-CDIP-EP
-Gate Charge (Qg) @ Vgs	4.3nC @ 5V
-FET Type	MOSFET N-Channel, Metal Oxide
-Family	FETs - Single
-Mounting Type	Through Hole