HGT1S12N60A4DS

HGT1S12N60A4DS Series 600 V 54 A SMT N-Channel IGBT - TO-263AB

Manufacturer onsemi MPN HGT1S12N60A4DS SPQ 50 ECCN EAR99 Schedule B -- RoHS -- Datasheet --

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Product parameter

-Current - Collector Pulsed (Icm)	96A
-Power - Max	167W
-Supplier Device Package	D²PAK
-Td (on/off) @ 25°C	17ns/96ns
-Packaging	Tube
-Gate Charge	78nC
-Family	IGBTs - Single
-Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 12A
-Input Type	Standard
-Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-Test Condition	390V, 12A, 10 Ohm, 15V
-Standard Package	50
-Current - Collector (Ic) (Max)	54A
-Reverse Recovery Time (trr)	30ns
-Voltage - Collector Emitter Breakdown (Max)	600V
-Mounting Type	Surface Mount
-Switching Energy	55µJ (on), 50µJ (off)
-ECCN	EAR99