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HGT1S10N120BNS

IGBT 1200V 35A 298W TO263AB

Manufacturer onsemi
MPN HGT1S10N120BNS
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-Current - Collector Pulsed (Icm) 80A
-Power - Max 298W
-IGBT Type NPT
-Standard Package   50
-Current - Collector (Ic) (Max) 35A
-Gate Charge 100nC
-Family IGBTs - Single
-Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A
-Input Type Standard
-Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-Test Condition 960V, 10A, 10 Ohm, 15V
-Supplier Device Package TO-263AB
-Td (on/off) @ 25°C 23ns/165ns
-Packaging   Tube  
-Voltage - Collector Emitter Breakdown (Max) 1200V
-Mounting Type Surface Mount
-Switching Energy 320µJ (on), 800µJ (off)

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