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GB01SLT12-214

SIC SCHOTTKY DIODE 1200V 1A

Manufacturer GeneSiC Semiconductor
MPN GB01SLT12-214
SPQ 1
ECCN --
Schedule B --
RoHS RoHS Compliant
Datasheet GB01SLT12-214.pdf GB01SLT12-214.pdf
SP1027
Dollar $2.59625
RMB ¥21.56354
Stock type SP1027
Stock num 9000
Stepped
num price
3000+ $2.59625
6000+ $2.50325

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Product parameter

-Package / Case DO-214
-Current - Average Rectified (Io) 2.5A
-Supplier Device Package SMB (DO-214AA)
-Diode Type Silicon Carbide Schottky
-Category Discrete Semiconductor Products
-Reverse Recovery Time (trr) 0ns
-Series SiC Schottky MPS™
-Mounting Type Surface Mount
-Voltage - Forward (Vf) (Max) @ If 1.8V @ 1A
-RoHS Lead free / RoHS Compliant
-ECCN Number EAR99
-Configuration Single
-Current (IF) (Per Diode) 1 A
-Switching Speed (ts) < 10 ns
-Minimum Operating Temperature -55 ℃
-Unit Weight 0.1 g
-Capacitance @ Vr, F 69pF @ 1V, 1MHz
-Operating Temperature - Junction -55°C ~ 175°C
-Part Status Active
-Speed No Recovery Time > 500mA (Io)
-Manufacturer GeneSiC Semiconductor
-Current - Reverse Leakage @ Vr 10µA @ 1200V
-Family Diodes - Rectifiers - Single
-Voltage - DC Reverse (Vr) (Max) 1200V (1.2kV)
-Packaging Tape and Reel
-HTS Code 8541.10.0080
-Mounting Style Surface Mount
-Blocking Voltage (VR) 1200 V
-Reverse Recovery Time (trr) 0 ns
-Forward Voltage (VF) (Typical) (25°C) 1.5 V
-Maximum Operating Temperature 175℃
-Moisture Sensitivity Level (MSL) 1 (Unlimited)

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