| -Vce Saturation (Max) @ Ib, Ic |
300mV @ 500µA, 10mA |
| -Resistor - Base (R1) (Ohms) |
4.7k |
| -Power - Max |
300mW |
| -Resistor - Emitter Base (R2) (Ohms) |
4.7k |
| -Standard Package |
10,000 |
| -Packaging |
Bulk |
| -Family |
Transistors (BJT) - Single, Pre-Biased |
| -Current - Collector Cutoff (Max) |
100nA (ICBO) |
| -Frequency - Transition |
250MHz |
| -Package / Case |
TO-226-3, TO-92-3 Short Body |
| -Transistor Type |
NPN - Pre-Biased |
| -Supplier Device Package |
TO-92S |
| -Current - Collector (Ic) (Max) |
100mA |
| -Voltage - Collector Emitter Breakdown (Max) |
50V |
| -Mounting Type |
Through Hole |
| -DC Current Gain (hFE) (Min) @ Ic, Vce |
20 @ 10mA, 5V |
