| -Vce Saturation (Max) @ Ib, Ic |
300mV @ 500碌A, 10mA |
| -Resistor - Base (R1) (Ohms) |
2.2k |
| -Power - Max |
300mW |
| -Resistor - Emitter Base (R2) (Ohms) |
10k |
| -Standard Package |
2,000 |
| -Current - Collector (Ic) (Max) |
100mA |
| -Voltage - Collector Emitter Breakdown (Max) |
50V |
| -Mounting Type |
Through Hole |
| -DC Current Gain (hFE) (Min) @ Ic, Vce |
33 @ 10mA, 5V |
| -Frequency - Transition |
250MHz |
| -Package / Case |
TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| -Transistor Type |
NPN - Pre-Biased |
| -Supplier Device Package |
TO-92-3 |
| -PCN Design/Specification |
Copper Lead Frame 12/Oct/2007 |
| -Packaging |
Tape & Box (TB) |
| -Family |
Transistors (BJT) - Single, Pre-Biased |
| -Current - Collector Cutoff (Max) |
100nA (ICBO) |
