FDS3812

MOSFET 2N-CH 80V 3.4A 8SOIC

Manufacturer onsemi MPN FDS3812 SPQ 2500 ECCN -- Schedule B -- RoHS -- Datasheet --

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Product parameter

-FET Feature	Logic Level Gate
-Package / Case	8-SOIC (0.154", 3.90mm Width)
-Drain to Source Voltage (Vdss)	80V
-Standard Package	2,500
-Current - Continuous Drain (Id) @ 25掳C	3.4A
-FET Type	2 N-Channel (Dual)
-Family	FETs - Arrays
-Mounting Type	Surface Mount
-Rds On (Max) @ Id, Vgs	74 mOhm @ 3.4A, 10V
-Power - Max	900mW
-Supplier Device Package	8-SOIC N
-Gate Charge (Qg) @ Vgs	18nC @ 10V
-Packaging	Tape & Reel (TR)
-Series	PowerTrench庐
-Vgs(th) (Max) @ Id	4V @ 250碌A
-Input Capacitance (Ciss) @ Vds	634pF @ 40V