FDMC8200S_F106

MOSFET 2N-CH 30V 6A/8.5A 8MLP

Manufacturer onsemi MPN FDMC8200S_F106 SPQ 1 ECCN -- Schedule B -- RoHS -- Datasheet --

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Product parameter

-FET Feature	Logic Level Gate
-Package / Case	8-PowerWDFN
-Drain to Source Voltage (Vdss)	30V
-Current - Continuous Drain (Id) @ 25°C	6A, 8.5A
-Gate Charge (Qg) @ Vgs	10nC @ 10V
-FET Type	2 N-Channel (Dual)
-Family	FETs - Arrays
-Mounting Type	Surface Mount
-Rds On (Max) @ Id, Vgs	20 mOhm @ 6A, 10V
-Power - Max	700mW, 1W
-Supplier Device Package	Power33
-Standard Package	1
-Packaging	Cut Tape (CT)
-Series	PowerTrench®
-Vgs(th) (Max) @ Id	3V @ 250µA
-Input Capacitance (Ciss) @ Vds	660pF @ 15V