FDC6020C

MOSFET N/P-CH 20V 6SSOT

Manufacturer onsemi MPN FDC6020C SPQ 3000 ECCN -- Schedule B -- RoHS -- Datasheet --

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Product parameter

-FET Feature	Logic Level Gate
-Package / Case	6-SSOT Flat-lead, SuperSOT™-6 FLMP
-Drain to Source Voltage (Vdss)	20V
-Current - Continuous Drain (Id) @ 25°C	5.9A, 4.2A
-Gate Charge (Qg) @ Vgs	8nC @ 4.5V
-Packaging	Cut Tape (CT)
-Series	PowerTrench®
-Vgs(th) (Max) @ Id	1.5V @ 250µA
-Input Capacitance (Ciss) @ Vds	677pF @ 10V
-Rds On (Max) @ Id, Vgs	27 mOhm @ 5.9A, 4.5V
-Power - Max	1.2W
-Supplier Device Package	6-SSOT
-Standard Package	1
-PCN Design/Specification	Mold Compound 27/March/2008
-FET Type	N and P-Channel
-Family	FETs - Arrays
-Mounting Type	Surface Mount