EPC8004ENGR

TRANS GAN 40V 4.4A BUMPED DIE

Manufacturer Efficient Power Conversion MPN EPC8004ENGR SPQ 10 ECCN -- Schedule B -- RoHS -- Datasheet --

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Product parameter

-FET Feature	Logic Level Gate
-Rds On (Max) @ Id, Vgs	125 mOhm @ 500mA, 5V
-Drain to Source Voltage (Vdss)	40V
-Current - Continuous Drain (Id) @ 25°C	4.4A (Ta)
-Packaging	Tray
-Series	eGaN®
-Vgs(th) (Max) @ Id	2.5V @ 250µA
-Input Capacitance (Ciss) @ Vds	45pF @ 20V
-Mfg Application Notes	Assembling eGaN® FETS Die Attach Procedure Die Removal Procedure eGaN FETs for Multi-Megahertz Hard Switching Applications
-Package / Case	Die
-Supplier Device Package	Die
-Standard Package	10
-FET Type	GaNFET N-Channel, Gallium Nitride
-Family	FETs - Single
-Mounting Type	Surface Mount