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EML20T2R

TRANS PREBIAS NPN 0.15W

Manufacturer ROHM Semiconductor
MPN EML20T2R
SPQ 8000
ECCN --
Schedule B --
RoHS --
Datasheet EML20T2R.pdf

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Product parameter

-Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
-Resistor - Base (R1) (Ohms) 2.2k
-Power - Max 150mW
-Resistor - Emitter Base (R2) (Ohms) 47k
-Current - Collector (Ic) (Max) 100mA
-Category Discrete Semiconductor Products
-Voltage - Collector Emitter Breakdown (Max) 50V
-Mounting Type Surface Mount
-DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
-Categories Discrete Semiconductor Products -> Transistors - Bipolar (BJT) - Single, Pre-Biased
-Moisture Sensitivity Level (MSL) 1 (Unlimited)
-Frequency - Transition 250MHz
-Package / Case SOT-563, SOT-666
-Transistor Type NPN - Pre-Biased + Diode
-Supplier Device Package EMT6
-Part Status Not For New Designs
-Manufacturer Rohm Semiconductor
-Family Transistors - Bipolar (BJT) - Single, Pre-Biased
-Current - Collector Cutoff (Max) 500nA
-Packaging Tape & Reel (TR)
-Resistor - Base (R1) 2.2 kOhms

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