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EMF8T2R

TRANS NPN PREBIAS/NPN 0.15W EMT6

Manufacturer ROHM Semiconductor
MPN EMF8T2R
SPQ 8000
ECCN --
Schedule B --
RoHS --
Datasheet EMF8T2R.pdf

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Product parameter

-Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA
-Resistor - Base (R1) (Ohms) 47k
-Power - Max 150mW
-Resistor - Emitter Base (R2) (Ohms) 47k
-Standard Package   8,000
-Packaging   Tape & Reel (TR)  
-Family Transistors (BJT) - Arrays, Pre-Biased
-Current - Collector Cutoff (Max) 500nA
-Categories Discrete Semiconductor Products -> Transistors - Bipolar (BJT) - Arrays, Pre-Biased
-Part Status Not For New Designs
-Moisture Sensitivity Level (MSL) 1 (Unlimited)
-Frequency - Transition 250MHz, 320MHz
-Package / Case SOT-563, SOT-666
-Transistor Type 1 NPN Pre-Biased, 1 NPN
-Supplier Device Package EMT6
-Current - Collector (Ic) (Max) 100mA, 500mA
-Voltage - Collector Emitter Breakdown (Max) 50V, 12V
-Mounting Type Surface Mount
-DC Current Gain (hFE) (Min) @ Ic, Vce 68 @ 5mA, 5V / 270 @ 10mA, 2V
-Resistor - Base (R1) 47 kOhms
-Manufacturer Rohm Semiconductor

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