| -Vce Saturation (Max) @ Ib, Ic |
300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA |
| -Resistor - Base (R1) (Ohms) |
10k |
| -Power - Max |
150mW |
| -Resistor - Emitter Base (R2) (Ohms) |
10k |
| -Standard Package |
8,000 |
| -Packaging |
Tape & Reel (TR) |
| -Family |
Transistors (BJT) - Arrays, Pre-Biased |
| -Current - Collector Cutoff (Max) |
500nA |
| -Categories |
Discrete Semiconductor Products -> Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
| -Part Status |
Obsolete |
| -Frequency - Transition |
250MHz, 320MHz |
| -Package / Case |
SOT-563, SOT-666 |
| -Transistor Type |
1 NPN Pre-Biased, 1 NPN |
| -Supplier Device Package |
EMT6 |
| -Current - Collector (Ic) (Max) |
100mA, 500mA |
| -Voltage - Collector Emitter Breakdown (Max) |
50V, 12V |
| -Mounting Type |
Surface Mount |
| -DC Current Gain (hFE) (Min) @ Ic, Vce |
30 @ 5mA, 5V / 270 @ 10mA, 2V |
| -Resistor - Base (R1) |
10 kOhms |
| -Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
