English 简体中文 日本語

EMF17T2R

TRANS NPN PREBIAS/PNP 0.15W EMT6

Manufacturer ROHM Semiconductor
MPN EMF17T2R
SPQ 8000
ECCN --
Schedule B --
RoHS --
Datasheet --

Quote

Demand quantity Target price
Contact number name
company email

Product parameter

-Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA / 500mV @ 5mA, 50mA
-Resistor - Base (R1) (Ohms) 2.2k
-Power - Max 150mW
-Resistor - Emitter Base (R2) (Ohms) 2.2k
-Current - Collector (Ic) (Max) 100mA, 150mA
-Category Discrete Semiconductor Products
-Voltage - Collector Emitter Breakdown (Max) 50V
-Mounting Type Surface Mount
-DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 20mA, 5V / 180 @ 1mA, 6V
-Categories Discrete Semiconductor Products -> Transistors - Bipolar (BJT) - Arrays, Pre-Biased
-Moisture Sensitivity Level (MSL) 1 (Unlimited)
-Frequency - Transition 250MHz, 140MHz
-Package / Case SOT-563, SOT-666
-Transistor Type 1 NPN Pre-Biased, 1 PNP
-Supplier Device Package EMT6
-Part Status Not For New Designs
-Manufacturer Rohm Semiconductor
-Family Transistors - Bipolar (BJT) - Arrays, Pre-Biased
-Current - Collector Cutoff (Max) 500nA
-Packaging Tape & Reel (TR)
-Resistor - Base (R1) 2.2 kOhms

Copyright © 1997-2013 NetEase. All Rights Reserved.