| -Vce Saturation (Max) @ Ib, Ic |
250mV @ 300µA, 10mA |
| -PCN Assembly/Origin |
Qualification Assembly/Test Site 25/Sep/2014 Wafer Source Addition 26/Nov/2014 |
| -Power - Max |
500mW |
| -Resistor - Emitter Base (R2) (Ohms) |
10k, 47k |
| -Standard Package |
8,000 |
| -Current - Collector (Ic) (Max) |
100mA |
| -Voltage - Collector Emitter Breakdown (Max) |
50V |
| -Mounting Type |
Surface Mount |
| -DC Current Gain (hFE) (Min) @ Ic, Vce |
80 @ 5mA, 10V / 20 @ 5mA, 10V |
| -Resistor - Base (R1) (Ohms) |
4.7k, 47k |
| -Package / Case |
SOT-563, SOT-666 |
| -Transistor Type |
1 NPN, 1 PNP - Pre-Biased (Dual) |
| -Supplier Device Package |
SOT-563 |
| -PCN Design/Specification |
Wire Bond 01/Dec/2010 |
| -Packaging |
Tape & Reel (TR) |
| -Family |
Transistors (BJT) - Arrays, Pre-Biased |
| -Current - Collector Cutoff (Max) |
500nA |
