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EMD5DXV6T1G

TRANS PREBIAS NPN/PNP SOT563

制造商 onsemi
制造商零件编号 EMD5DXV6T1G
标准包装 4000
ECCN --
Schedule B --
RoHS --
规格说明书 EMD5DXV6T1G.pdf

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产品参数

-Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
-Package / Case SOT-563, SOT-666
-Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
-Supplier Device Package SOT-563
-Current - Collector (Ic) (Max) 100mA
-Voltage - Collector Emitter Breakdown (Max) 50V
-Mounting Type Surface Mount
-DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V / 20 @ 5mA, 10V
-Resistor - Base (R1) (Ohms) 4.7k, 47k
-Power - Max 500mW
-Resistor - Emitter Base (R2) (Ohms) 10k, 47k
-Standard Package   4,000
-Packaging   Tape & Reel (TR)  
-Family Transistors (BJT) - Arrays, Pre-Biased
-Current - Collector Cutoff (Max) 500nA

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