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EMA11T2R

TRANS 2PNP PREBIAS 0.15W EMT5

Manufacturer ROHM Semiconductor
MPN EMA11T2R
SPQ 8000
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
-Resistor - Base (R1) (Ohms) 4.7k
-Power - Max 150mW
-Resistor - Emitter Base (R2) (Ohms) 47k
-Current - Collector (Ic) (Max) 100mA
-Category Discrete Semiconductor Products
-Voltage - Collector Emitter Breakdown (Max) 50V
-Mounting Type Surface Mount
-DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
-Categories Discrete Semiconductor Products -> Transistors - Bipolar (BJT) - Arrays, Pre-Biased
-Moisture Sensitivity Level (MSL) 1 (Unlimited)
-Frequency - Transition 250MHz
-Package / Case 6-SMD (5 Leads), Flat Lead
-Transistor Type 2 PNP - Pre-Biased (Dual)
-Supplier Device Package EMT5
-Part Status Not For New Designs
-Manufacturer Rohm Semiconductor
-Family Transistors - Bipolar (BJT) - Arrays, Pre-Biased
-Current - Collector Cutoff (Max) 500nA
-Packaging Tape & Reel (TR)
-Resistor - Base (R1) 4.7 kOhms

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