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DTD123TSTP

TRANS PREBIAS NPN 300MW SPT

Manufacturer ROHM Semiconductor
MPN DTD123TSTP
SPQ 5000
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
-Resistor - Base (R1) (Ohms) 2.2k
-Power - Max 300mW
-Supplier Device Package SPT
-Current - Collector (Ic) (Max) 500mA
-Voltage - Collector Emitter Breakdown (Max) 40V
-Mounting Type Through Hole
-DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 50mA, 5V
-Resistor - Base (R1) 2.2 kOhms
-Manufacturer Rohm Semiconductor
-Base Part Number DTD123
-Frequency - Transition 200MHz
-Package / Case SC-72 Formed Leads
-Transistor Type NPN - Pre-Biased
-Standard Package   5,000
-Packaging   Tape & Reel (TR)  
-Family Transistors (BJT) - Single, Pre-Biased
-Current - Collector Cutoff (Max) 500nA (ICBO)
-Categories Discrete Semiconductor Products -> Transistors - Bipolar (BJT) - Single, Pre-Biased
-Part Status Obsolete
-Moisture Sensitivity Level (MSL) 1 (Unlimited)

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