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DTC363EUT106

TRANS PREBIAS NPN 200MW UMT3

Manufacturer ROHM Semiconductor
MPN DTC363EUT106
SPQ 3000
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-Vce Saturation (Max) @ Ib, Ic 80mV @ 2.5mA, 50mA
-Resistor - Base (R1) (Ohms) 6.8k
-Power - Max 200mW
-Resistor - Emitter Base (R2) (Ohms) 6.8k
-Standard Package   3,000
-Packaging   Tape & Reel (TR)  
-Family Transistors (BJT) - Single, Pre-Biased
-Current - Collector Cutoff (Max) 500nA
-Categories Discrete Semiconductor Products -> Transistors - Bipolar (BJT) - Single, Pre-Biased
-Part Status Obsolete
-Moisture Sensitivity Level (MSL) 1 (Unlimited)
-Frequency - Transition 200MHz
-Package / Case SC-70, SOT-323
-Transistor Type NPN - Pre-Biased
-Supplier Device Package UMT3
-Current - Collector (Ic) (Max) 600mA
-Voltage - Collector Emitter Breakdown (Max) 20V
-Mounting Type Surface Mount
-DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 50mA, 5V
-Resistor - Base (R1) 6.8 kOhms
-Manufacturer Rohm Semiconductor
-Base Part Number DTC363

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