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DTB743EMT2L

TRANS PREBIAS PNP 150MW VMT3

Manufacturer ROHM Semiconductor
MPN DTB743EMT2L
SPQ 8000
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
-Resistor - Base (R1) (Ohms) 4.7k
-Power - Max 150mW
-Resistor - Emitter Base (R2) (Ohms) 4.7k
-Standard Package   8,000
-Packaging   Tape & Reel (TR)  
-Family Transistors (BJT) - Single, Pre-Biased
-Current - Collector Cutoff (Max) 500nA
-Categories Discrete Semiconductor Products -> Transistors - Bipolar (BJT) - Single, Pre-Biased
-Part Status Not For New Designs
-Base Part Number DTB743
-Frequency - Transition 260MHz
-Package / Case SOT-723
-Transistor Type PNP - Pre-Biased
-Supplier Device Package VMT3
-Current - Collector (Ic) (Max) 200mA
-Voltage - Collector Emitter Breakdown (Max) 30V
-Mounting Type Surface Mount
-DC Current Gain (hFE) (Min) @ Ic, Vce 115 @ 100mA, 2V
-Resistor - Base (R1) 4.7 kOhms
-Moisture Sensitivity Level (MSL) 1 (Unlimited)

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