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DMP2008UFG-13

POWERDI3333-8/20V P-CHANNEL ENHANCEMENT MODE MOSFET

制造商 Diodes Incorporated
制造商零件编号 DMP2008UFG-13
标准包装 1
ECCN --
Schedule B --
RoHS --
规格说明书 DMP2008UFG-13.pdf

询价

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产品参数

-FET Feature Standard
-Package / Case 8-PowerWDFN
-Drain to Source Voltage (Vdss) 20V
-Current - Continuous Drain (Id) @ 25°C 14A (Ta), 54A (Tc)
-Part Status Active
-Manufacturer Diodes Incorporated
-Family Transistors - FETs, MOSFETs - Single
-Mounting Type Surface Mount
-Input Capacitance (Ciss) @ Vds 6909pF @ 10V
-Rds On (Max) @ Id, Vgs 8 mOhm @ 12A, 4.5V
-Power - Max 2.4W
-Supplier Device Package PowerDI3333-8
-Gate Charge (Qg) @ Vgs 72nC @ 4.5V
-Category Discrete Semiconductor Products
-FET Type MOSFET P-Channel, Metal Oxide
-Vgs(th) (Max) @ Id 1V @ 250µA
-Operating Temperature -55°C ~ 150°C (TJ)
-Packaging Tape & Reel (TR)

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