DMN63D8LDW-13

Dual N-Channel 30 V 2.8 Ω 0.3 W Surface Mount Enhancement Mode MosFet - SOT-363

制造商 Diodes Incorporated 制造商零件编号 DMN63D8LDW-13 标准包装 10000 ECCN EAR99 Schedule B -- RoHS -- 规格说明书 --

询价

需求数量		目标价格
联系电话		姓名
公司		邮箱

产品参数

-FET Feature	Logic Level Gate
-Package / Case	6-TSSOP, SC-88, SOT-363
-Drain to Source Voltage (Vdss)	30V
-Current - Continuous Drain (Id) @ 25°C	220mA
-Gate Charge (Qg) @ Vgs	870nC @ 10V
-FET Type	2 N-Channel (Dual)
-Vgs(th) (Max) @ Id	1.5V @ 250µA
-RoHS Information	RoHS Cert of Compliance
-ECCN	EAR99
-Rds On (Max) @ Id, Vgs	2.8 Ohm @ 250mA, 10V
-Power - Max	300mW
-Supplier Device Package	SOT-363
-Standard Package	10,000
-Packaging	Tape & Reel (TR)
-Family	FETs - Arrays
-Mounting Type	Surface Mount
-Input Capacitance (Ciss) @ Vds	22pF @ 25V