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DMN3200U-7

Single N-Channel 30 V 200 mOhm 650 mW Silicon Surface Mount Mosfet - SOT-23

Manufacturer Diodes Incorporated
MPN DMN3200U-7
SPQ 1
ECCN EAR99
Schedule B --
RoHS --
Datasheet DMN3200U-7.pdf
SP1038
Dollar $0.15605
RMB ¥1.2961
Stock type SP1038
Stock num 95
Stepped
num price
1+ $0.15605
SP1036
Dollar $0.08553
RMB ¥0.71038
Stock type SP1036
Stock num 8277
Stepped
num price
1+ $0.08553
200+ $0.05519
1500+ $0.04797
3000+ $0.04248

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Product parameter

-FET Feature Logic Level Gate
-Package / Case TO-236-3, SC-59, SOT-23-3
-Drain to Source Voltage (Vdss) 30V
-Current - Continuous Drain (Id) @ 25°C 2.2A (Ta)
-PCN Design/Specification Green Encapsulate 15/May/2008 Bond Wire 3/May/2011
-FET Type MOSFET N-Channel, Metal Oxide
-Family FETs - Single
-Mounting Type Surface Mount
-Input Capacitance (Ciss) @ Vds 290pF @ 10V
-Rds On (Max) @ Id, Vgs 90 mOhm @ 2.2A, 4.5V
-Power - Max 650mW
-Supplier Device Package SOT-23-3
-Standard Package   3,000
-Packaging   Tape & Reel (TR)  
-PCN Other Multiple Device Changes 29/Apr/2013
-Vgs(th) (Max) @ Id 1V @ 250µA
-RoHS Information RoHS Cert of Compliance
-ECCN EAR99

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