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DMN3112S-7

DMN3112S-7 , N沟道 MOSFET 晶体管, 5.8 A, Vds=30 V, 3针 SOT-23封装

Manufacturer Diodes Incorporated
MPN DMN3112S-7
SPQ 3000
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-FET Feature Logic Level Gate
-Package / Case TO-236-3, SC-59, SOT-23-3
-PCN Obsolescence/ EOL Select Discrete Devices 20/Feb/2014
-Supplier Device Package SOT-23-3
-Catalog Drawings SOT-23 Package Top SOT-23 Package Side 1 SOT-23 Package Side 2
-Packaging   Digi-Reel®  
-PCN Other Multiple Device Changes 29/Apr/2013
-Vgs(th) (Max) @ Id 2.2V @ 250µA
-RoHS Information RoHS Cert of Compliance
-Rds On (Max) @ Id, Vgs 57 mOhm @ 5.8A, 10V
-Power - Max 1.4W
-Drain to Source Voltage (Vdss) 30V
-Current - Continuous Drain (Id) @ 25°C 5.8A (Ta)
-Standard Package   1
-FET Type MOSFET N-Channel, Metal Oxide
-Family FETs - Single
-Mounting Type Surface Mount
-Input Capacitance (Ciss) @ Vds 268pF @ 5V

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