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DMN2501UFB4-7

MOSFET N-CH 20V 1A 3DFN

制造商 Diodes Incorporated
制造商零件编号 DMN2501UFB4-7
标准包装 1
ECCN --
Schedule B --
RoHS --
规格说明书 DMN2501UFB4-7.pdf

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产品参数

-FET Feature Logic Level Gate
-Package / Case 3-XFDFN
-Drain to Source Voltage (Vdss) 20V
-Current - Continuous Drain (Id) @ 25°C 1A (Ta)
-Gate Charge (Qg) @ Vgs 2nC @ 10V
-FET Type MOSFET N-Channel, Metal Oxide
-Vgs(th) (Max) @ Id 1V @ 250µA
-RoHS Information RoHS Cert of Compliance
-Rds On (Max) @ Id, Vgs 400 mOhm @ 600mA, 4.5V
-Power - Max 500mW
-Supplier Device Package 3-DFN1006 (1.0x0.6)
-Standard Package   3,000
-Packaging   Tape & Reel (TR)  
-Family FETs - Single
-Mounting Type Surface Mount
-Input Capacitance (Ciss) @ Vds 82pF @ 16V

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