STGW60H65DRF

60 A, 650 V field stop trench gate IGBT with Ultrafast diode

Manufacturer STMicroelectronics MPN STGW60H65DRF SPQ 30 ECCN -- Schedule B -- RoHS RoHS Compliant Datasheet STGW60H65DRF.pdf

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Product parameter

-Current - Collector Pulsed (Icm)	240A
-Power - Max	420W
-IGBT Type	Trench and Field Stop
-Td (on/off) @ 25°C	85ns/178ns
-Other Related Documents	STGW60H65DRF View All Specifications
-Gate Charge	217nC
-Voltage - Collector Emitter Breakdown (Max)	650V
-Mounting Type	Through Hole
-Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 60A
-Packaging	Tube
-Package / Case	TO-247-3
-Test Condition	400V, 60A, 10 Ohm, 15V
-Supplier Device Package	TO-247
-Current - Collector (Ic) (Max)	120A
-Reverse Recovery Time (trr)	19ns
-Online Catalog	Standard IGBTs
-Family	IGBTs - Single
-Switching Energy	940µJ (on), 1.06mJ (off)
-Input Type	Standard
-RoHS	Lead free / RoHS Compliant